Quantum spintronics aims at utilizing the quantum nature of individual spins to bring new functionalities into logic circuits, either to make classical information processing more efficient or to implement spin-based quantum algorithms. Two critical aspects for quantum spintronics are a long spin coherence time and a strong, tunable spin-orbit interaction for fast electrical manipulation of spins. Up to now, experiments have mainly focused on III-V semiconductor nanostructures, where hyperfine coupling with nuclear spins limits electron-spin coherence. Low nuclear spin materials, and in particular group-IV semiconductors, were found to be a natural alternative. However, in most of the currently studied group-IV based systems, spin-orbit coupling is very weak, preventing fast electrical manipulation of spins.We propose to investigate a new direction based on p-type SiGe nanostructures. This system has the unique combination of low hyperfine and strong spin-orbit couplings. Aside from developing demonstrator devices such as spin-filters or single spin qubits, we aim at exploring recently proposed schemes for long range spin-spin coupling, an essential requirement for scalable qubit circuits. To investigate hole-spin dynamics and achieve quantum spintronic functionalities, novel types of concepts will be experimentally investigated (spin-polarized helical states, spin-orbit mechanisms for spin-selective tunneling and long-range spin-spin coupling, etc.). Because of the higher complexity of hole-type systems, a dedicated theoretical framework will be developed in support to experiments. In addition to a bottom-up approach which has been successful in providing nanowire and quantum-dot heterostructures, we shall realize SiGe quantum devices by means of state-of-the-art CMOS technology. This will allow us to know how spin-based functionalities demonstrated in bottom-up nanostructures can be implemented into a truly scalable silicon platform.