"In this project we will develop multiscale modelling technology supported by comprehensive experimental characterization techniques to study the degradation and reliability of next generation Complimentary-Metal-Oxide-Semiconductor (CMOS) devices. Building upon fundamental analysis of the structure and electronic properties of relevant materials and interfaces at the quantum mechanical level, we will construct mesoscale models to account for defect generation and impact on CMOS transistor and circuit performance and yield. The models will provide detailed understanding of the common reliability issues and degradation routes, and will be verified by cutting edge experimental characterization. Strong links with industry insures that the project will make a step change in the process of next generation device modelling and design. The project will provide technologists, device engineers and designers in the nano CMOS industry with tools, reference databases and examples of how to produce next generation devices that are economical, efficient, and meet performance, reliability and degradation standards."