The CopPeR project will provide a novel copper deposition process based on the useof non-aqueous solvents to overcome the limitations of currently employedinterconnect formation processes enabling device scaling beyond the 32 nmtechnology node. This non-aqueous process will open novel routes to implementdirect on barrier plating, focussing on tantalum and ruthenium as diffusion barriers.As another main advantage the process developed and implemented within theCopPeR project will significantly improve the quality of the Cu metallization due to thefact that more space is available in trenches for high quality, low resistivity Cu, due tothe fact that the resistivity limiting seed-Cu will be eliminated and thinner barrier filmscan be applied, e.g. by ALD (atomic layer deposition).CopPeR will achieve the final goal through collaborations within a very strongconsortium based on a team with outstanding scientific, engineering andmanufacturing qualifications. In a first phase, electrolyte ingredients will be selectedand experimentally verified, a deposition cell designed through modelling andsimulation as well as new analytical techniques evaluated to enable adequateanalysis of the deposited films. The second phase will focus on the development ofthe copper deposition process based on the findings from phase one with theadditional support of micro-modelling and the process scaled and integrated into a300mm proof-of-concept. In the third and final phase, the process will be integratedinto a complete interconnect scheme, and optimized according to the industrial chipmanufacturer's needs.