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Compound Semiconductors for 3D integration (COMPOSE3)
Start date: Nov 1, 2013, End date: Oct 31, 2016,
COMPOSE3 aims to develop 3D stacked circuits in the front end of line of Complementary Metal Oxide Semiconductor (CMOS) technology, based on high mobility channel materials. The final objective is a 3D stacked SRAM cell, designed with gates length taken from the 14nm technology node. This technology will provide a new paradigm shift in density scaling combined with a dramatic increase in the power ...
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