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The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is ab ...

The project aims to realise a strong methodology for the development and design of non volatile memories usign standard CMOS silicon process actually used for consumer electronics. Since standard silicon memories, such as other silicon devices for consumer market, fails under irradiation two different approaches are envisaged: the first one is to develop specific technological processes able to su ...