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We propose to develop for the first time a dual-channel CMOS technology comprising high channel mobility (high-µ) Ge pMOS and III-V compound semiconductor nMOS transistors co-integrated on the same complex engineered substrate on Si. This offers a high performance booster as an option for the 22 nm technology creating competitive advantage for the European nanoelectronics industry. In addition, hi ...

Supporting the next generation of content-rich networked services on mobile devices is presenting major technical challenges for Europe's semiconductor and Consumer Electronics industries. Unlike the standard PC architecture, these devices have huge variation in multimedia capability and must operate under widely varying network conditions. Software complexity growth on these devices is now outpac ...