The goal of IFOX is to explore, create and control novel electronic and magnetic functionalities, with focus on interfaces, in complex transition metal oxide heterostructures to develop the material platform for novel ‘More than Moore’ (MtM) and ‘beyond CMOS’ electronics, VLSI integratable with performance and functionality far beyond the state-of-the-art. To this end it will:-Establish a theoretical basis to identify the most promising materials/heterostructures and to understand the new functionalities relevant for electronic applications-Grow oxide films on commercial substrates with a quality comparable to state-of-the-art semiconductor growth-Establish their patterning and processing conditions within the boundary conditions of current fabrication technologies-Characterize their structural, electronic and magnetic properties to deliver concepts for novel charge and/or spin based devices in the areas of memories, logic and sensor applications.Investigations include ferroelectric and ferromagnetic oxides as well as artificial multiferroic heterostructures (deposited on large area silicon substrates) with as final deliverable concepts for multifunctional magneto-electronics devices controlled by electric and magnetic fields and ultimately by ultra short light pulses.The consortium of world leaders in the areas of theory, oxide deposition, lithography, device fabrication, and various characterization techniques will allow full control of all interface properties dominating the physical behaviour of oxide nano- and heterostructures. The goals of IFOX are driven by the needs of a large automotive company (FIAT) seeking to use oxides in electronic sensors for MtM and automotive applications. It is further supported by three SMEs with expertise and infrastructure for epitaxial oxide growth and upscaling on Si with the goal to transfer academic knowledge to industry.