The Terahertz range (300 GHz – 3 THz) of the electromagnetic spectrum is largely unused for the lack of solid-state Terahertz electronic components. Exciting applications can be found in many areas including Communications, Navigation, Security, Material Engineering, and Medical and Life Sciences, owing to the character of Terahertz electromagnetic radiation. Examples of applications are high-bandwidth (>= 100 Gb/s) wireless communication links for next-generation wireless backhaul, campus and in-building mobile networks and wireless access networks, high-resolution RADAR for autonomous machine and robotic applications, imaging of concealed objects, detection of trace substances such as explosives and toxic gases by Terahertz spectroscopy, material defect imaging and analysis, and subcutaneous and dental imaging. To date, the realization of Solid-State Terahertz Electronic Circuits with significant output power remains an unsolved technological challenge. To reach this goal, faster transistors capable of outputting significant power are needed. Frequency scaling is accomplished by shrinking optimized high-speed transistors to lateral dimensions below 100 nm. Within the proposed four-year program, the goal is to reach transistor gain cut-off frequencies in excess of one Terahertz, and circuit fundamental operating frequencies of 300 to 500 GHz, with useable output power in the range of a few milliwatts. The Ferdinand Braun Institute maintains a research program focused on high-power sub-Terahertz electronics. This research proposal would broaden on-going research efforts, establishing higher frequency InP HBT components, hence opening a new research direction within the Terahertz research field already established at Ferdinand-Braun-Institut. The host institute will provide an excellent work environment to carry out research on Terahertz electronics in terms of collaborative scientific interaction as well as fabrication and measurement instrumentation infrastructure.