The advent of non-volatile flash memory -- silicon-based semiconductor memory that does not lose its data when the power is turned off -- revolutionized consumer electronics. Similar types of organic memory will play a pivotal role in the wide range of new market opportunities of flexible electronics based on organic transistor technology. Currently, these memory elements do not exist, thus forming a major impediment to the commercialization of flexible and organic transistors.The aim of the MOMA project is to research the materials, process technologies and electronic design to make nonvolatile memory arrays that can be programmed and read electronically using organic thin-film circuitry on very thin, flexible plastic foils such as polyethylene naphthalate. The main strategy is to use soluble ferroelectric polymers in combination with organic semiconductors. Two different device types are considered, thin-film transistors and diodes. The resistive switching that they provide results in a high or a low current response that can read non-destructively.A concrete focus on highly integrated memory demonstrators will be used to drive the research and technology forward, and allows a small, concise list of goals for MOMA:- Develop a high yield process to make re-programmable, non-volatile elements that can be written and read-out electronically using thin-film transistor circuitry on plastic substrates.- Deliver technical prototypes of multi-bit arrays of polymer ferroelectric diodes and/or TFTs with 100 ppi resolution.- Design and fabricate low-temperature, high-quality organic TFT driving circuitry on flexible plastic substrates that can program and read electronically an array of 96 bits.