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"This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected.AL-IN-WON will explore two main disrupting routes:- Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability.- High effi ...

"On the very last months, the Gallium Nitride (GaN) technology has made a remarked breakthrough in the world of the microwave electronics with the announcement of commercially available transistors from 5W to 180W at microwave frequencies. Coming from major transistor industrial vendors from Japon but also from US, it let equipment manufacturers and especially the one from space think that time ha ...