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Surface engineered InGaN heterostructures on N-polar and nonpolar GaN-substrates for green light emitters (SINOPLE)
Start date: Dec 1, 2009, End date: Nov 30, 2013,
"The goal of this project is to develop the potential of molecular beam epitaxy on nearly dislocation free GaN single crystals for semiconductor lasers in the green spectral range (520-550nm). The active structure will consist of In-rich InGaN layers. Our goal is to push the internal quantum efficiencies of green emitting InGaN devices at 520 nm beyond 30% and to obtain stimulated emission beyond ...
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