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10 European Projects Found

Searched on 125080 European Projects

 FINISHED 

Graphene-based disruptive technologies (GrapheneCore1)

Start date: Apr 1, 2016, End date: Mar 31, 2018,

This project is the second in the series of EC-financed parts of the Graphene Flagship. The Graphene Flagship is a 10 year research and innovation endeavour with a total project cost of 1,000,000,000 euros, funded jointly by the European Commission and member states and associated countries. The first part of the Flagship was a 30-month Collaborative Project, Coordination and Support Action (CP-CS ...
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 158

 FINISHED 

"Graphene Layers: Production, Characterization and Integration" (GLADIATOR)

Start date: Nov 1, 2013, End date: Apr 30, 2017,

"GLADIATOR (Graphene Layers: Production, Characterization and Integration) will enable the scalable production of cheaper, higher quality and larger area graphene sheets. The project will achieve this by optimizing the performance of CVD graphene (using doping), by increasing the throughput and size of CVD batch reactors, and by improving the process by which graphene is transferred for the CVD ca ...
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 16

 FINISHED 

Nanoelectronics based on two-dimensional dichalcogenides (MoWSeS)

Start date: Mar 1, 2013, End date: Feb 28, 2017,

Semiconductor industry rapidly approaches the performance limits of silicon-based CMOS technology. This proposal aims to pave the wayto electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues ofgraphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materi ...
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 8

 FINISHED 

Graphene-Based Revolutions in ICT And Beyond (GRAPHENE)

Start date: Oct 1, 2013, End date: Mar 31, 2016,

This Flagship aims to take graphene and related layered materials from a state of raw potential to a point where they can revolutionize multiple industries – from flexible, wearable and transparent electronics, to new energy applications and novel functional composites.Our main scientific and technological objectives in the different tiers of the value chain are to develop material technologies fo ...
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 154

 FINISHED 

GaN-based normally-off high power switching transistor for efficient power converters (HiPoSwitch)

Start date: Sep 1, 2011, End date: Feb 28, 2015,

Highly efficient power electronics is needed for low volume and low weight future power conversion systems. The proposed project aims for the exploitation of novel gallium nitride (GaN) transistors for advanced switched power supplies. High voltage normally-off GaN power devices on Si substrates in vertical device architecture will be developed and its technology transferred to an European industr ...
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 9

 FINISHED 

"European Research Training Network of “New Materials: Innovative Concepts for their Fabrication, Integration and Characterization”" (ENHANCE)

Start date: Oct 1, 2009, End date: Sep 30, 2013,

"The multi-site European initial training network – “ENHANCE” – “New Materials: Innovative Concepts for their Fabrication, Integration and Characterization” will be established to deal with the mid and long term issues of concern to the European industry encompassing the whole spectrum of functional materials for microelectronics, nano-electronics, data storage, photovoltaic, with emphasis on emer ...
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 8

 FINISHED 

Multi-APprOach for high efficiency integrated and inteLLigent cONcentrating PV modules (Systems) (APOLLON)

Start date: Jul 1, 2008, End date: Jun 30, 2013,

"APOLLON proposal concerns the optimisation and development of Point focus and Mirror Based Spectra Splitting photovoltaic concentrating (CPV) systems (multi-approach). The different technology paths will be followed with due focalisation on the recognised critical issues related to each system component in order to increase CPV efficiency, assure reliability, reduce cost and environmental impact. ...
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 18

 FINISHED 

European 450mm Equipment & Materials Initiative (EEMI 450)

Start date: Apr 1, 2010, End date: Mar 1, 2013,

Large-scale semiconductor fabrication is now standardised on 300mm diameter wafers. However, as demand grows and node dimensions diminish, major chipmakers are considering offsetting the growing costs of miniaturisation by increasing wafer size to 450mm to cut cost per produced die. A prerequisite is the availability of the required quality wafers and equipment able to handle larger wafers. The EN ...
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 27

 FINISHED 

High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys - (The RAINBOW ITN) (RAINBOW)

Start date: Oct 1, 2008, End date: Sep 30, 2012,

"Indium nitride is a new narrow gap semiconductor (
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 14

 FINISHED 

Dual-channel CMOS for (sub)-22 nm high performance logic (DUALLOGIC)

Start date: Dec 1, 2007, End date: May 31, 2011,

We propose to develop for the first time a dual-channel CMOS technology comprising high channel mobility (high-µ) Ge pMOS and III-V compound semiconductor nMOS transistors co-integrated on the same complex engineered substrate on Si. This offers a high performance booster as an option for the 22 nm technology creating competitive advantage for the European nanoelectronics industry. In addition, hi ...
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 9